The SI 500 D is a high density plasma deposition system developed for ICPECVD of dielectric films. It allows to deposit high quality SiO2, Si3N4, and SiOxNy films at very low temperatures (< 100ºC).
The SI 500 D is characterized by:
- (P)lanar (T)riple (S)piral (A)ntenna source
- High deposition rate
- Low damage
- High quality low temperature deposition of dielectrics
- (T >= 80°C)
- Remote field control via serial field bus
- SENTECH’s plasma process systems operating software
- Through-the-wall installation
System configurations:
- PTSA ICP source (13.56 MHz, 1200 W)
- Two circular gas inlets
- 6 MFC controlled gas lines (SiH4, NH3, N2O, O2, Ar, CF4)
- Vacuum load lock with pick-and-place
- High speed pumping system with pressure control independent of gas flow
- Insulated electrode for substrates of 6" diameter (smaller wafers and pieces on 6" carrier)
- substrate temperature RT up to 350ºC
- Remote field controller (RFC)
- Windows XP operating system
- SENTECH’s Plasma process systems operating software
Features:
- Automated and manual process control
- Recipe controlled etch processes
- Intelligent process control by jumps, loops, and calls in recipes
- Different access levels
- Data logging
- LAN and internet access
- Windows XP operation software
Options:
- Additional gas lines
- Cassette to cassette handling
- Through-the-wall installation
- Laser interferometric endpoint detector
Please contact us for more information.
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