Plasma Deposition PECVD

Low stress, high rate, low temperature and low damage plasma enhanced chemical vapor deposition (PECVD).

Plasma deposition of: SiO2, SiNx, SiOxNy, TEOS, a-Si:H, µ-Si:H, and DLC.

SI500D	ICPECVD system for high plasma density deposition of high quality dielectric and semiconductor films with unsurpassed mechanical, electrical and chemical properties at low temperatures (80°C-130°C).
SI500PPD	PPD PECVD plasma deposition system for dielectric and semiconductor films with stress control.