Low damage, high rate, temperature controlled plasma etching of MEMS, silicon, micro-optics, semiconductors, dielectrics, organic and metal films .
PTSA ICP plasma etcher for low damage, high aspect ratio and high rate etching of semiconductors and dielectrics.
cryogenic PTSA ICP plasma etcher for DRIE with unsurpassed small side wall roughness at substrate temperatures between -150°C and 400°C.
PTSA-ICP plasma etcher for 300 mm diameter substrates and carriers.
upgradeable low cost RIE plasma etcher with open lid.
advanced RIE plasma etcher for chlorine and fluorine chemistry with vacuum load lock
cost effective, open lid RIE plasma etcher for large area samples and respectively large number of wafers with open lid.
