Indium Antimonide (InSb)
Indium Antimonide (InSb) is a narrow gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, and in astronomy. The InSb detectors are sensitive between 1 µm to 5 µm wavelengths.
InSb is a crystalline compound made from the elements indium and antimony. It has the appearance of dark grey silvery metal pieces or powder with vitreous luster. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and antimony oxide vapors.
InSb photodiode detectors are photovoltaic, generating electric current when subjected to infrared radiation. InSb has high quantum efficiency (80-90%). InSb detectors are used where extreme sensitivity is required, e.g. in long-range military thermal imaging systems. InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K).
Crystal Growth
Czochralski growth to 125mm
Undoped, mobility to 7E5 cm²/V*S
Te doped 1E14 to 3E18 carriers/cm³
Defect Densities
typically <20/cm² on 50mm wafers
<50/cm² on 76 to 100mm wafer
Fabrication
using low damage technologies we can fabricate wafers of any shape or orientation (±0.5°) to 100mm
custom specialty shapes and sizes available
orientation flats as required
Polishing
mechanical and chem-mechanical
single-side and double-side polishing available
typical PV <5 microns over 90% of wafer
ultra clean surface
Identification
laser-scribed wafer ID, on request
Shipping
GelPaks, Fluoroware, or custom
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Gallium Antimonide (GaSb)
Gallium Antimonide (GaSb) crystals are grown using the Czochralski method. 6N+ Ga & Sb are compounded, then routinely pulled to 3" in diameter. Firebird crystals have uniform carrier homogeneity and low defect densities. Crystals are grown in the <100> orientation as undoped <3E16 @ 77K, Te-doped 1E17-5E18 (n-type) or Cd-doped 1E17 - 5E18 (p-type). Other dopants are possible.
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