We are the UK distributor for Saint-Gobain Crystals Lumilog. Saint-Gobain Crystals is a world leader in the development, growth and finishing of high purity single crystal material. LUMILOG develops and manufactures Bulk GaN (GaN Free Standing) and GaN epiwafers on sapphire substrates with very low dislocations densities. Please visit http://www.photonic.saint-gobain.com/GaN-Substrates.aspx for more information.
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High quality GaN substrates are required to fabricate long-lived, efficient and reliable optoelectronic and electronic devices. Nitride semiconductors are currently used in a variety of components such as near UV Laser Diodes for new generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.
GaN Free Standing
Saint-Gobain Crystals-Lumilog offers high quality and cost effective GaN Free Standing wafers.
GaN Free Standing LED Quality wafers are n-type (indicated by a “N” in the Item Reference):
| Item Reference | FSLEDQ51N |
| Size | Ø 2" |
| Exclusion zone | 3 mm from outer diameter |
| Thickness | Standard : 300 µm ± 50 µm
Option: 400 µm ± 50 µm |
| TDs density | typical 1-2 x 107 cm-2
maxi 4 x 107 cm-2 |
| Resistivity | (300K) <30 mO.cm |
| Polishing | Standard : Single Side Polished
Option : Double Side Polished |
GaN Free Standing LED Quality Epifinished wafers are n-type (indicated by a “N” in the Item Reference):
This substrate consists of a GaN epilayer regrown by MOVPE on a GaN Free Standing LED Quality wafer (indicated by a “E” in the Item Ref.)
| Item Reference | FSLEDQE51N |
| Size | Ø 2" |
| Exclusion zone | 3 mm from outer diameter |
| Thickness | Standard : 300 µm ± 50 µm
Option : 400 µm ± 50 µm |
| TDs density | typical 1-2 x 107 cm-2
maxi 4 x 107 cm-2 |
| Resistivity (300K) | <30 mO.cm |
| Polishing | Standard: Double Side Polished
Option: Single Side Polished |
| MOVPE epilayer thickness typical | 3 µm |
| MOVPE epilayer carrier concentration (300 K) | 1-3 x 1018 cm-3 |
GaN Standard Templates on Sapphire Substrates
Gallium Nitride (GaN) Standard templates are cost effective, low dislocation density GaN substrates, suitable for all Opto and electronic applications.
Standard templates are offered in 3 different types:
- Non-Intentionally Doped Standard GaN Templates
| Item Reference | STNID |
| Size | Ø 2" |
| Exclusion zone | 5 mm from outer diameter |
| Thickness | typical 3.5 µm
mini 3 µm |
| Thickness uniformity | ± 5 % |
| TDs density | typical 5 x 108 cm-2
maxi 6 x 108 cm-2 |
| Carrier concentration (300K) | maxi 3 x 1017 cm-3 |
- Silicon Doped GaN Standard Templates
| Item Reference | STN |
| Size | Ø 2" |
| Exclusion zone | 5 mm from outer diameter |
| Thickness | typical 3.5 µmmini 3 µm |
| Thickness uniformity | ± 5 % |
| TDs density | typical 5 x 108 cm-2
maxi 6 x 108 cm-2 |
| Carrier concentration (300K) | mini 1 x 1018 cm-3
maxi 3 x 1018 cm-3 |
| Carrier concentration uniformity | ± 10% |
- Fe-Doped Semi Insulating GaN Standard Templates
| Item Reference | STINS |
| Size | Ø 2" |
| Exclusion zone | 5 mm from outer diameter |
| Thickness | maxi 4 µm |
| Thickness uniformity | ± 5 % |
| TDs density | typical 8 x 108 cm-2 |
| R square (300K) | typical 10 MO |
- Sapphire Substrate Characteristics
| Diameter | Ø2" |
| Orientation | (0001) off 0.25 ± 0.1° |
| Sapphire thickness | 0.330 mm |
| Polishing | Single side polished |
GaN Ultra Low Dislocation Templates on Sapphire Substrates
ULD templates are particularly well adapted for high brightness UV LEDs.
ULD templates are offered in 2 different types:
- Non Intentionally Doped GaN Ultra Low Dislocation Templates
| Item Reference | ULDNID |
| Size | Ø 2" |
| Exclusion zone | 5 mm from outer diameter |
| Thickness | typical 10 µm
mini 9 µm |
| Thickness uniformity | ± 5 % |
| TDs density | typical 8 x 107 cm-2
maxi 9 x 107 cm-2 |
| Carrier concentration (300K) | maxi 3 x 1017 cm-3 |
- Silicon Doped GaN Ultra Low Dislocation Templates
| Item Reference | ULDN |
| Size | Ø 2" |
| Exclusion zone | 5 mm from outer diameter |
| Thickness | typical 10 µm
mini 9 µm |
| Thickness uniformity | ± 5 % |
| TDs density | typical 8 x 107 cm-2
maxi 9 x 107 cm-2 |
| Carrier concentration (300K) | mini 1 x 1018 cm-3
maxi 3 x 1018 cm-3 |
| Carrier concentration uniformity | ± 10% |
- Sapphire Substrate Characteristics
| Diameter | Ø2" |
| Orientation | (0001) off 0.25 ± 0.1° |
| Sapphire thickness | 0.330 mm |
| Polishing | Single side polished |
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