|
We supply low cost, premium quality Ge wafers to the manufacturers of multi-junction, compound semiconductor photovoltaics. These high-efficiency solar cells are used for both space and earth-based (terrestrial) solar power generation. Used in tracking concentrator photovoltaic (CPV) arrays, this technology offers the prospect of clean, renewable, utility power generation at competitive rates.
Our substrates are epi-ready, which means they are ultra-clean and meet rigid customer specifications for immediate insertion into thin-film, vacuum deposition systems. In addition to multi-junction PV applications, we can provide Ge substrates in customized diameters, thicknesses, surface finishes, and electrical properties for electronics and research applications.
Our germanium substrates are fabricated from zero-defect, single-crystal ingots grown in new, state-of-the-art growth stations. The Firebird technical team is arguably North America's premier crystal growth group, with over 100 years of combined experience in semiconductor crystal growth and wafer fabrication.
Germanium Specifications
| Crystal Pulling Method | Czochralski |
| Dislocation Density | Zero Dislocation |
| Doping | P-Type |
| Resistivity | 0.005 to 0.050 ohm-cm, typical range of 0.008 – 0.035 ohm-cm |
| Orientation | <100> 6 degrees off cut towards <111> |
| Frontside and Backside Finish | EPI polish finish on one side |
| Diameter | 100 mm, 150 mm |
| Thickness | 100mm: 130 – 200um, 150mm: 200-230um |
Other specifications available. Please contact us for more information.
|