Mi-Net Technology Ltd is the UK sales agent for Picogiga International SAS of France.
 The compound semiconductor industry emerged in the early 1980s to help meet the increasingly stringent manufacturing demands associated with high-frequency electronics and optoelectronics products. Founded in 1985, Picogiga SA was an early leader in this market, specializing in gallium arsenide (GaAs) material. Thanks to its mastery of molecular beam epitaxy technology (MBE), the company became a world-leading supplier of epitaxial compound semiconductor wafers for microwaves and RF applications.
In April 2003, Soitec, the world leader in silicon-on-insulator (SOI) material and other engineered substrates acquired the assets of Picogiga SA, including most of the key personnel, creating a new, wholly owned Soitec Group subsidiary-Picogiga International SAS-concentrated on the development and manufacturing of compound semiconductor products.
In January 2004, Soitec-Picogiga became the first commercial company to launch industrial production of GaN epitaxial structures on Silicon substrate required to manufacture high-electron-mobility transistors (HEMTs) used in wireless-infrastructure and other high power RF applications.
Knowledge & Expertise
A valued partner in the field of substrate engineering for III-V material applications, Picogiga is now quite unique in the compound semiconductor industry due to its ability to grow epi wafers and develop multilayer substrates tailored for specific applications.
Leveraging its proven experience growing epitaxial layers on GaAs and other compound semiconductor substrates using MBE technology, Picogiga International is now targeting new markets requiring specific composite materials. These include indium phosphide (InP), gallium nitride (GaN)and silicon carbide (SiC), as well as GaAs, all of which are being pursued for high-frequency, high-power applications (e.g., mobile telecommunications, local networks and radar detection) and optoelectronic devices (e.g., detection systems, Fiber optics networks, LEDs and lasers).
Foundational Strengths
- 20 years of experience in MBE technology used to manufacture epitaxial layers on compound semiconductors for MESFET, HEMT and HBT devices.
- Large installed base for R&D and manufacturing (10 MBE reactors, 2-to 6-wafer capabilities, state-of-the-art facilities).
- Solid financial backing from Soitec Group.
- Long historical partnership with key customers in military and aerospace industries, as well as in commercial telecommunications.
- Expertise in advanced solutions for performance-driven applications.
- Large international customer base in USA, Asia and Europe.
Forward-Looking Market Strategy
- Develop and sell new generations of product lines,dedicated to and tailored for InGaP HBT, GaAsSb HBT, metamorphic GaAs HEMTs and GaN HEMTs on silicon.
- Combine Soitec’s proprietary Smart Cut™ technology with compound-semiconductor epitaxial-layer technology to provide customers in RF and microwave market with innovative, fully engineered, high-value-add substrate solutions.
- Implement a solid, long-term strategy combining the above technologies to enter new markets beyond RF applications.
Product Lines
- Epiwafers on GaAs for MESFET, HEMT, P-HEMT devices (etch stop and phosporus doping optional).
- Epiwafers on GaAs for metamorphic HEMT.
- Epiwafers on GaAS for InGaP HBT.
- Epiwafers on InP for GaAsSb HBT.
- GaN Epiwafers on Si , SiC or multiplayer Smart Cut™ Substrates for high power HEMT.
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