| Material |
Hg1-x Cdx Te |
| Type |
N-Type or P-Type |
| Crystallography |
Single Grain Crystal |
| Cut Off Wave Lengths |
10 – 25µm for long range @ 77K (dependent on required Cd value)
5 - 5.5µm @ -65°C for mid range
2.6 - 3µm @ 25°C for short range
|
| X Factor |
Various ranges of compositions of Cd can be supplied on order |
| 770K Electron Carrier Concentration |
No less than 4x1014 CM-3(1.01 E14 to 7.05E15) |
| 770K Electron Mobility |
1.5x105 cm2xV-1xsec-1 (5.86 E4 to 1.69E5) |
| Wafer Diameter |
15mm |
| MCT Planks |
Planks cut to required length up to 20mm: Width up to 15mm |
| Wafer Thickness |
0.5mm (+0.1mm) |
| Surface Finish |
Mechanical-chemical mirror polish (MCP) on one side of wafer after annealing for N-Type |
| Documentation for each wafer |
Carrier concentration and mobility @77K and @300K, 1 in 5 wafers qualified in Hall and FTIR measurements. |
| Sampling |
All wafers will be in a group with a minimum of 4 consecutively numbered wafers.
Spitfire will ship a wafer from each group and hold remaining wafers pending approval from client.
|
