Application Note - Deposition of Multilayer by Thermal and Plasma Enhanced ALD


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In this application note by Sentech Instruments Thermal ALD-Al2O3 and PEALD-SiO2 films were deposited alternately in the SENTECH ALD system SI ALD LL. The deposition of the multilayer is performed automatically using a recipe run. In total 53 layers with different thicknesses between 9 and 70 nm were deposited on 4-inch silicon wafer (Si-wafer).

Atomic layer deposition (ALD) is a chemical vapor deposition technique that is based on the sequential use of at least two different materials, called precursors. Although the number of available precursors increases every day, some important ones, like the silicon precursor SAM.24 from Air Liquide, still work only with plasma enhanced atomic layer deposition mode (PEALD). For some optical applications, multilayers of alternated Al2O3 and SiO2 films are in demand.

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Multilayer thickness distribution after ALD