Application Note - Low damage etching of AlGaN open gate layer in AlGaN/GaN sensor for detecting NO2 by SENTECH SI 500 ICP etching system


Home > Application Notes > Low damage etching of AlGaN

Related Product - Sentech Plasma Etchers

The SENTECH SI 500 ICP etcher is equipped with a Planar Triple Spiral Antenna (PTSA) as the plasma source enabling low damage processing. The PTSA is an inductively coupled plasma (ICP) source with narrow ion energy distribution at low ion energies. Using the example of etching sensitive heterostructures for sensors, in this application note we present the unique properties of the SENTECH proprietary PTSA plasma source. Using the SI 500 tool, charge sensitive heterostructures like AlGaN/GaN can be etched without causing damage. Sensors based on AlGaN/GaN heterostructures are for instance promising devices for detecting extremely toxic gases such as NO2.