Plasma Etching Systems ICP-RIE / RIE


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Plasma Etching

Sample Processing

Send us your samples to process - To demonstrate the unique strengths of the SENTECH etchers send us your samples to process. Customers are also welcome to visit the SENTEH plasma lab to see the tools for themselves. Contact us to discuss your specific application.

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Featured Application Note

High selectivity SiNx Etching by SENTECH SI 500 ICP-RIE etching system - This application note presents a successful ICP process result with a moderate etch rate and a proper selectivity to photoresist mask. Read more...

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Plasma Etching

ICP-RIE plasma etcher SI 500 | RIE plasma etcher Etchlab 200 | RIE plasma etcher SI 591

The SENTECH Instruments plasma etching range comprises high end ICP-RIE systems and cost effective RIE systems. SENTECH Instruments have over 25 years of experience in the thin film industry and are known for high quality, reliability and excellent service.

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ICP-RIE Plasma Etcher SI 500 | High End Plasma Etching System

SI500 Plasma Etcher

Low Damage Etching: Due to low ion energy and narrow ion energy distribution, low damage etching and nano structuring can be performed with the SENTECH ICP plasma etching tools.

Simple High Rate Etching: High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.

Inhouse ICP Plasma Source: The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems. The PTSA source generates homogeneous plasma with high ion density and low ion energy. It features high coupling efficiency and very good ignition behaviour for processing of a large variety of materials and structures.

Dynamic Temperature Control: Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching. The ICP substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from -150 °C up to +400 °C.

The SI 500 represents the leading edge for inductive coupled plasma (ICP) processing in research and production. It is based on the ICP plasma source PTSA, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user-friendly general user interface for operating the SI 500. Flexibility and modularity are design characteristics of the SI 500.

A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 ICP plasma etching system. The single wafer vacuum loadlock guarantees stable process conditions and allows easy switch of processes.

The SI 500 ICP plasma etching tool can be configured for processing of a variety of materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 500 ICP for plasma etching is available as process module on cluster configuration as well.

SI 500: ICP plasma etching tool, with vacuum loadlock, for up to 200mm wafers, substrate temperatures from -20°C to 300°C.

SI 500 C: Cryogenic ICP plasma etching system, with transfer chamber and vacuum loadlock, substrate temperature from -150 °C to 400 °C

SI 500 RIE: RIE plasma etching system, smart solution for He backside cooled etching, capacitive coupled plasma source, upgradable to ICP plasma source PTSA 200.

SI 500-300: ICP plasma etching system, with vacuum loadlock, for 300 mm wafers.

RIE Plasma Etcher Etchlab 200 | Cost Effective Plasma Etcher

Etchlab 200 Plasma Etcher

Cost-Effectiveness: RIE plasma etcher Etchlab 200 combines parallel plate plasma source design with direct load.

Upgradeability: According to its modular design, the plasma etcher Etchlab 200 is upgradeable with larger pumping unit, vacuum loadlock, and additional gas lines.

SENTECH control software: This plasma etcher is equipped with a user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, user management.

The Etchlab 200 RIE plasma etcher represents a family of direct load plasma etcher combining the advantages of a parallel plate electrode design for RIE with the cost effective design of direct load. The Etchlab 200 features simple and fast sample loading from parts to 200 mm or 300 mm diameter wafer directly onto the electrode or on carrier. Flexibility, modularity, and a small footprint are design characteristics of the Etchlab 200. Large diagnostic windows located at the top electrode and the reactor can easily accommodate the SENTECH laser interferometer or OES and RGA systems. Ellipsometer ports are available for process monitoring using SENTECH insitu ellipsometers.

The Etchlab 200 plasma etcher can be configured for processing of materials that are compatible with wafer direct loading, including but not limited to silicon and silicon compounds, compound semiconductors, dielectrics, and metals.

The Etchlab 200 is operated by the advanced SENTECH control software using remote field bus technology and a very user-friendly general user interface.

Etchlab 200: RIE plasma etcher, Open lid, For up to 200 mm wafers, Diagnostic windows for laser interferometer and OES, Ellipsometer ports optionally available.

Etchlab 200 with loadlock: RIE etcher with loadlock, For 4 inch up to 8 inch wafers, Carriers for pieces and smaller wafers, Chlorine etching chemistry, Larger pumping unit.

Etchlab 200-300: RIE plasma etcher, Open lid, For up to 300 mm wafers, Diagnostic windows for laser interferometer and OES.

RIE Plasma Etcher SI 591 | Compact Plasma Etcher With Load Lock

Etchlab 200 Plasma Etcher

Process flexibility: The RIE etcher SI 591 compact facilitates a large number of chlorine and fluorine based plasma etching processes.

Small footprint and high modularity: SI 591 compact can be configured as single reactor or as cluster tool with cassette-to-cassette loading.

SENTECH control software: This plasma etcher is equipped with a user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, user management.

The SI 591 compact stands for excellent process reproducibility and plasma etching process flexibility due to the vacuum loadlock and fully computer controlled plasma etching process conditions. Flexibility, modularity, and a small footprint are design characteristics of the SI 591 compact. Samples up to 200 mm diameter and carrier can be loaded. The SI 591 compact can be configured for through the wall operation or minimal footprint with multiple options.

Large diagnostic windows located at top electrode and reactor can easily accommodate the SENTECH laser interferometer or OES and RGA systems. Ellipsometer ports are available for process monitoring using SENTECH insitu ellipsometers.

The SI 591 compact combines the advantages of a parallel plate electrode design for RIE with the fully computer controlled etch process conditions of the loadlock system. The SI 591 compact can be configured for processing of a variety of materials. At SENTECH we offer different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 591 compact is available as process module on cluster configuration as well.

SI 591 Compact: RIE plasma etching with small footprint, Loadlock, Halogen and fluorine chemistry, For up to 200 mm wafers, Diagnostic windows for laser interferometer and OES

SI 591 Cluster: Configurations of up to 6-port transfer chamber available, Combination of RIE, ICP-RIE, and PECVD, Manual vacuum loadlock or cassette station, Cluster for R & D and high throughput, SENTECH control software.