Silicon Wafers

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Mi-Net Technology Ltd is a supplier of Czochralski (Cz) and Float Zone (Fz) Silicon Wafers for a large range of Semiconductor applications. We pride ourselves on our commitment to our customer's needs, so if there is something specific you require please ask and we will do our best to supply it for you.

Our UK Silicon wafers come packed in cassettes and are vacuum sealed in a clean room environment.

As well as standard silicon wafers we also offer wafers with thermal oxide (SiO2) layers and silicon nitride (Si3N4) layers.

Silicon Wafers Available

Grade
Prime
Test

Diameter (inches)
1"
2"
3"
4"
5"
6"
8"
12"

Diameter (mm)
25.4mm
50.8mm
76.2mm
100mm
125mm
150mm
200mm
300mm

Thickness (um)
250um
275um
375um
380um
525um
625um
675um
725um
775um
from 120um to 15mm available on request

Process
CZ
FZ

Conductivity
P-Type
N-Type
Intrinsic

Dopant
Boron
Phosphorous
Antimony
Arsenic
Undoped

Polish
SSP
DSP

Orientation
<100>
<111>
<110>
Also available on request:
<211>
<311>
<411>
<511>
<711>
<911>
<210>
<310>
<510>
<910>
<531>
<731>

Standard Tolerance
± 0.5°
On Request
± 0.02°

OFF Cut
Compared to ON axis (100), (111), (110), (112):
Up to 14° ± 0.02°

Resistivity
0.001 ohm-cm ~ 10000 ohm-cm
Custom high accuracy available. Please ask.



Films and Oxides

Layer
Thermal Oxide (SiO2)
Silicon Nitride (Si3N4)

Oxide Thickness
Up to 6um
Other thicknesses available on request

Tolerance
+/- 5% or better

Multi-Layers
Available on request





Silicon Thermal Oxide Wafers SiO2

Growth of a silicon oxide layer on a silicon surface (SiO2) can be carried out via a dry or wet oxidation processes. In both cases, silicon reacts with oxygen leading to a moving interface towards the substrate.

Dry oxidation typically takes place at temperatures in between 850 and 1200°C and it demonstrates low growth rates. It does allow very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Thermal oxidation usually takes place on both sides of the substrate in the coating chamber. We are able to protect one side of the substrate allowing us to supply wafers with the oxide on one side only.

Silicon Nitride Wafer Si3N4

LPCVD silicon nitride layers are easily deposited on silicon wafers in a reproducible, pure and uniform way. This leads to silicon nitride layers with low electrical conductivity, very good coverage of edges and high thermal stability.

PECVD silicon nitride layers allow higher growth rate, which leads to thicker layers. Stoichiometry and stress can also be adjusted. High thickness uniformity and etch rates are eventually obtained. PECVD Silicon nitride wafers are particularly suitable for passivation layers.

Deposition and Metallization on Silicon Wafers

We can propose different solutions including:

Multi-layer Deposition on Silicon Wafers

On request we can combine deposition technologies to deposit multi layers onto silicon. We can combine oxidisation, nitridation and metals on the same silicon wafer.

Machining / Slicing / Dicing

We can offer a variety of options for processing and customising wafers:

Downsizing, Edge Grinding and Rounding

We are able to down size wafers for various applications. We can also round the edges of wafers to remove sharp, damaged wafer edges and to remove stress.

Surface Preparation

We can utilise various surface preparation techniques such as:

Please contact us with information of your requirements and we will be pleased to help.